Program Results

Introduction to the event

In this year’s progress, professor Wei-Ting Hsu worked with laboratory members to complete the installation of the diamond anvil cell and 2D materials transfer system. In this study, for the first time, we quantitatively determine the effect of the interlayer spacing on the electronic coupling at each critical point of the Brillouin zone in bilayer MoS₂. The most exciting discovery is that the K-point coupling strength can exceed 100 meV through moderate pressure (about three times the enhancement compared to standard pressure), which proves that vertical stress has the potential to be used to tailor the electronic properties of van der Waals quantum materials. This work has been published in this year’s international academic journal. [Phys. Rev. B 106, 125302 (2022)].

The figure shows the structure of the high-pressure diamond anvil cell, the optical image of MoS2 sample, and the experimental results of K-point electronic coupling.